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preliminary data this is preliminary information on a new product now in deve lopment or undergoing evaluation. details are subject to change without notice. may 2008 rev 1 1/14 14 STGW38IH120D 30 a - 1200 v - very fast igbt features low saturation voltage high current capability low switching loss very soft ultra fast recovery antiparallel diode applications induction cooking, microwave oven soft switching application description this igbt utilizes th e advanced powermesh? process resulting in an excellent trade-off between switching performance and low on-state behavior. this device is well suited for the resonant or soft switching application. figure 1. internal schematic diagram to-247 long leads 1 2 3 table 1. device summary order code marking package packaging STGW38IH120D gw38ih120d to-247 long leads tube www.st.com
contents STGW38IH120D 2/14 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STGW38IH120D electrical ratings 3/14 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v ge = 0) 1200 v i c (1) 1. calculated according to the iterative formula: collector current (continuous) at 25 c 60 a i c (1) collector current (continuous) at 100 c 30 a i cl (2) 2. vclamp = 80% of v ces , t j =150 c, r g =10 ? , v ge =15 v turn-off latching current 45 a i cp (3) 3. pulse width limited by max. junction temperature allowed pulsed collector current 45 a v ge gate-emitter voltage 25 v p tot total dissipation at t c = 25 c 235 w i f diode rms forward current at t c = 25 c 30 a i fsm surge non repetitive forward current t p = 10 ms sinusoidal 100 a t j operating junction temperature ?55 to 150 c table 3. thermal resistance symbol parameter value unit r thj-case thermal resistance junction-case igbt max. 0.53 c/w r thj-case thermal resistance junction-case diode max. 1.36 c/w r thj-amb thermal resistance junction-ambient max. 40 c/w i c t c () t jmax t c ? r thj c ? v cesat max () t c i c , () ------------------------------------------------------------------------------------------------------ =
electrical characteristics STGW38IH120D 4/14 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. static symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 1 ma 1200 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 20 a v ge = 15 v, i c = 20 a, tc =125 c 2.2 2.0 2.8 v v v ge(th) gate threshold voltage v ce = v ge , i c = 1 ma 3.75 5.75 v i ces collector-cut -off current (v ge = 0) v ce =1200 v v ce =1200 v, tc=125 c 500 10 a ma i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 100 na g fs (1) 1. pulsed: pulse duration= 300 s, duty cycle 1.5% forward transconductance v ce = 25 v , i c = 20 a 20 s table 5. dynamic symbol parameter test cond itions min. typ. max. unit c ies c oes c res input capacitance output capacitance reverse transfer capacitance v ce = 25 v, f = 1 mhz, v ge =0 2900 162 30 pf pf pf q g q ge q gc total gate charge gate-emitter charge gate-collector charge v ce = 960 v, i c = 20 a,v ge =15 v 127 18 50 nc nc nc
STGW38IH120D electrical characteristics 5/14 table 6. switching on/off (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 960 v, i c = 20 a r g = 10 ? , v ge = 15 v, (see figure 17) 46 10 1660 ns ns a/s t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 960 v, i c = 20 a r g = 10 ? , v ge = 15 v, tc= 125 c (see figure 17) 45 12 1500 ns ns a/s t r (v off ) t d ( off ) t f off voltage rise time turn-off delay time current fall time v cc = 960 v, i c = 20 a r g = 10 ? , v ge = 15 v, (see figure 17) 102 284 180 ns ns ns t r (v off ) t d ( off ) t f off voltage rise time turn-off delay time current fall time v cc = 960 v, i c = 20 a r g = 10 ? , v ge = 15 v, tc= 125 c (see figure 17) 200 424 316 ns ns ns table 7. switching energy (inductive load) symbol parameter test conditions min. typ. max. unit eon (1) e off (2) e ts 1. eon is the turn-on losses when a typi cal diode is used in the test circuit in figure 2. if the igbt is offered in a package with a co-pack diode, the co-pack diode is used as external diode. igbts & diode are at the same temperature (25c and 125c) 2. turn-off losses include also the tail of the collector current turn-on switching losses turn-off switching losses total switching losses v cc = 960 v, i c = 20 a r g = 10 ? , v ge = 15 v, (see figure 17) 1.5 3.4 4.9 mj mj mj eon (1) e off (2) e ts turn-on switching losses turn-off switching losses total switching losses v cc = 960 v, i c = 20 a r g = 10 ? , v ge = 15 v, tc= 125 c (see figure 17) 2.3 6.4 8.7 mj mj mj
electrical characteristics STGW38IH120D 6/14 table 8. collector-emitter diode symbol parameter test conditions min. typ. max. unit v f forward on-voltage i f = 20 a i f = 20 a, t c = 125 c 1.9 1.7 v v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 20 a, v r = 45 v, di/dt = 100 a/s (see figure 20) 85 235 5.6 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 20 a, v r = 45 v, tc = 125 c, di/dt = 100 a/s (see figure 20) 152 722 9 ns nc a
STGW38IH120D electrical characteristics 7/14 2.1 electrical characteristi cs (curves) figure 2. output characteristics figure 3. transfer characteristics figure 4. transconductance figure 5. collector-emitter on voltage vs temperature figure 6. gate charge vs gate-source voltage figure 7. capacitance variations 0 50 100 150 200 250 i c (a) 7 v 8 v 9 v 10 v 11 v 12 v 1 3 v 14 v v ge =15 v hv425 8 0 5 10 15 v ce (v) 0 50 100 150 200 250 3 00 i c (a) 0 5 1 0 1 5 v ge (v) v ce =15v hv425 8 5 2 4 6 8 10 12 14 16 1 8 20 22 24 26 hv42590 0 5 10 15 20 i c (a) g f s ( s ) t c =-50c 25c 125c hv42600 v ce( sa t) (v) t j (c) 1.5 1.625 1.75 1. 8 75 2.0 2.125 2.25 2. 3 75 2.5 -75 -50 -25 02550 75 100 125 150 i c =10a i c =20a i c =40a 0 2 4 6 8 10 12 14 16 v ge (v) hv426 3 0 0 50 100 150 qg(nc) v ce =960v i c =20a 0 500 1000 1500 2000 2500 3 000 3 500 4000 4500 c(pf) 10 20 3 040 v ce (v) hv42620 f=1mhz cie s coe s cre s
electrical characteristics STGW38IH120D 8/14 figure 8. normalized gate threshold voltage vs temperature figure 9. collector-emitter on voltage vs collector current figure 10. normalized breakdown voltage vs temperature figure 11. switching losses vs temperature figure 12. switching losses vs gate resistance figure 13. switching losses vs collector current hv42610 v ge(th) (norm) 1.1 1.05 1.0 0.95 0.9 0. 8 5 0. 8 0.75 0.7 -75 -50 -25 0 25 50 75 100 125 150 t j (c) i c =250 a hv42650 v ce( sa t) (v) 0. 8 5 1.05 1.25 1.45 1.65 1. 8 5 2.05 2.25 2.45 10 0 20 3 0 40 i c (a) t c =125c t c =25c t c =-50c hv42640 bv ce s (norm) 0.9 0.925 0.95 0.975 1 1.025 1.05 1.075 1.1 -75 -50 -25 0 25 50 75 100 125 150 t j (c) i c =1ma
STGW38IH120D electrical characteristics 9/14 figure 14. thermal impedance figure 15. turn-off soa figure 16. emitter-collector diode characteristics 0.1 1 10 i c (a) 1 10 100 1000 hv42690 v ce (v) 0 10 20 3 0 40 50 60 70 8 0 90 100 0.0 0.5 1.0 1.5 2.0 2.5 3 .0 3 .5 4.0 4.5 i(a) fm v (v) fm t =25c (m a xim u m v a l u e s ) j t =150c (m a xim u m v a l u e s ) j t =150c (typic a l v a l u e s ) j
test circuit STGW38IH120D 10/14 3 test circuit figure 17. test circuit for inductive load switching figure 18. gate charge test circuit figure 19. switching waveform figure 20. diode recovery time waveform
STGW38IH120D package mechanical data 11/14 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect. the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
package mechanical data STGW38IH120D 12/14 to-247 lon g lead s mechanical data dim. mm min. typ. max. a4. 8 5 5.16 d2.2 2.6 e0.4 0. 8 f1 1.4 f1 3 f2 2 f 3 1. 9 2.4 f4 33 .4 g 10. 9 h 15.45 16.0 3 l1 9 . 8 521.0 9 l1 3 .7 4. 3 l2 1 8 . 3 1 9 .1 3 l 3 14.2 20. 3 l4 3 4.05 41. 38 l5 5. 3 56. 3 m2 3 v5 v2 60 diam 3 .55 3 .65 5 a dia d me f1 f2 f3 f4 f(x3) g = = v2 h l5 l1 l2 l l4 l3 v 7 39 5426_rev_d
STGW38IH120D revision history 13/14 5 revision history table 9. document revision history date revision changes 14-may-2008 1 initial release
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